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| Advance Technical Information High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 128 A = 15 m Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C MOSFET chip capability External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 150 150 20 30 128 75 512 90 60 2.5 5 540 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns TO-264 AA (IXTK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features W C C C C International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V DC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 150 2.0 4.0 100 50 2 15 V V nA A mA m Easy to mount with one screw (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS98952(03/03) IXTK 128N15 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 50 65 6000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 680 28 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External) 30 115 17 240 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 95 0.23 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Inches Max. TO-264 AA Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 60A, pulse test Min. Source-Drain Diode Symbol IS ISM VSD Trr QRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 128 512 1.5 A A V ns C Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100V 250 3 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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